Gallium Nitride (GaN) on Silicon (Si) Market

 

Gallium Nitride (GaN) on Silicon (Si) Market — Comprehensive Analysis

1. Market Overview

The global market for Gallium Nitride on silicon (GaN-on-Si) substrates and devices is gaining significant traction as an emerging technology that combines the wide-bandgap advantages of GaN with the cost-benefits and manufacturing scale of silicon. According to one credible source, the GaN-on-Si technology market attained a value of approximately **USD 232.39 million in 2024** and is projected to grow at a compound annual growth rate (CAGR) of about **38.3%** during 2025-2034, reaching **USD 5.95 billion by 2034**. :contentReference[oaicite:1]{index=1} Another estimate for the broader GaN-on-Si wafer (epitaxy) niche places the market at USD 1.817 billion in 2024 and forecasts growth to USD 9.864 billion by 2035 (CAGR ~16.6%) in one report. :contentReference[oaicite:2]{index=2}

Given this range of estimates, the market is still relatively early stage but showing strong growth potential. Key growth drivers include increasing demand for high-efficiency power electronics (e.g., fast chargers, EV onboard chargers, data-centre power supplies), proliferation of 5G wireless infrastructure requiring high-frequency RF devices, rising deployment of GaN in consumer electronics (e.g., GaN chargers), and improved manufacturing maturity (transition to larger wafers, cost reductions). For instance, a report indicates that GaN-on-Si adoption is aided by switching to 200 mm wafers and leveraging existing silicon foundry infrastructure. :contentReference[oaicite:3]{index=3}

Industry advancements such as enhancement-mode GaN HEMTs on silicon substrates, improved epitaxial wafers, improved yield, and thermal/defect-management innovations are making GaN-on-Si more commercially viable. On the trend side, the shift from legacy silicon MOSFETs to GaN in mid-voltage (e.g., 100 V, 650 V) power conversion, growing automotive (EV/HEV) platforms demanding higher power-density and efficiency, and integration of GaN in RF (5G, radar) are influencing the market landscape. For example, one source states that GaN-on-Si is the fastest rising substrate technology in the GaN device space through 2030. :contentReference[oaicite:4]{index=4}

From a value-perspective, although current volumes remain modest relative to conventional silicon or even SiC (silicon carbide) power semiconductors, the high growth rate suggests GaN-on-Si could become a meaningful segment in the semiconductor power/RF ecosystem. The combination of performance (higher switching frequency, lower losses) and cost (silicon substrate, standard fab tooling) makes GaN-on-Si a compelling proposition for both device makers and end-users.

2. Market Segmentation

2.1 By Wafer/Substrate & Device Structure

This segmentation divides the GaN-on-Silicon market by wafer size and device structural format. Sub-segments include **4-inch/150 mm wafers**, **6-/8-inch (200–300 mm) wafers**, **Discreet GaN HEMT devices on Si substrates**, and **Integrated GaN power ICs on Si**. The smaller wafer sizes (4-inch, 150 mm) represent early generation GaN-on-Si manufacturing and are predominantly used in niche devices such as fast chargers and small-footprint power modules. Example: In one analysis 6-inch substrates held ~37.8% share in 2024. :contentReference[oaicite:5]{index=5} The transition to larger wafer sizes (200-mm, 300-mm) is critical for cost parity and volume manufacturing; reports highlight that wafer size migration is a key trend. :contentReference[oaicite:6]{index=6} Discreet GaN HEMT devices (e.g., discrete transistors) form a significant part of the device market, offering high-speed switching and improved power density. Integrated GaN power ICs (embedding GaN transistors along with driver/control) represent a higher value sub-segment offering system-level benefits (reduced BOM, smaller footprint). Each sub-segment contributes differently: smaller wafers anchored early adoption; larger wafers enable scale; discrete devices provide current revenue base; power ICs represent premium growth. As cost decreases and yield improves, larger wafer and integrated device segments are expected to accelerate, boosting the overall GaN-on-Si market.

2.2 By Application / End-Use Industry

The market can also be segmented by application into **Power Conversion & Fast Chargers**, **Electric Vehicles / On-Board Chargers & Inverters**, **Telecom/RF Infrastructure (5G, Base Stations, Radar)**, and **Consumer Electronics & Data-Centre Power Supplies**. In the Power Conversion and Fast Charger sub-segment, GaN-on-Si devices deliver higher efficiency, smaller size and lower heat vs silicon MOSFETs; this sub-segment is seeing strong uptake in USB-C chargers, server power supplies etc. For example, GaN adoption in consumer chargers has been highlighted in multiple sources (e.g., fast chargers). In EV / On-Board Charger & Inverter segment, GaN-on-Si is increasingly used for mid-voltage conversion (e.g., 650 V) and in auxiliary/charging modules; one study reports Tier-1 automotive suppliers showing CAGR ~13.4% to 2030. :contentReference[oaicite:7]{index=7} Telecom/RF Infrastructure applications (5G base stations, mmWave, radar) benefit from GaN-on-Si’s high-frequency capability and silicon foundry cost structure; reports indicate the telecom/5G application accounted for ~27.9% of 2024 revenue. :contentReference[oaicite:8]{index=8} Consumer Electronics & Data-Centre Power Supplies sub-segment is growing as GaN enables smaller, higher-efficiency power modules in servers, data centres, mobile devices. These segments are significant because they drive both volume (chargers/consumer) and value (automotive/telecom), and each contributes to growth: power conversion builds base adoption, EV/automotive opens high-value large market, telecom/RF offers premium near-term growth, and consumer/data-centre adds large-volume demand.